The Global IGBT and Super Junction MOSFET Market is expected to grow from USD 2,559.3 Million in 2017 to USD 4,100.4 Million by 2025 at a CAGR of 6.1% during the forecast period from 2018-2025. The North America region is dominating the market because presence of government organizations including ASHRAE and USEPA which promotes and increasing awareness towards usage of these devices which will accelerate product demand. Also, high demand of the product across hospitals operating rooms and semiconductor manufacturing plants will spur demand during forecast period.

Leaders in the industry Mitsubishi Electric Corporation, Fairchild Semiconductor International, Inc., Infineon Technologies AG, STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd., and Semikron, Inc., among others among others which are offering greater opportunities and major players are continuously focused on new product developments and venture capital investments to obtain market share. For instance, April 2018, Fort Campbell was installed with IGBT and Super Junction MOSFET mechanisms to check driving licenses as well as military ID.

The product segment is classified into discrete and modules. The discrete segment dominated the market and valued around USD 5,519.46 Million in 2017. Discrete IGBT is used widely in consumer electronics as well as in high-power application areas. IGBT is expected to continue witnessing popularity wind and solar power generation, general-purpose inverters and high-frequency applications. Power adaptor miniaturization is expected to drive the super junction MOSFET market.

The application segment is segmented into UPS, EV/HEV, consumer electronics, industrial, adapter/charger/converter, motor drives, wind turbines, rail traction, PV inverters, lighting and others. Adapter/Charger/Converter segment dominated the market with the highest share of 23.10% in 2017. Adaptor or charger demand can be credited to growing number of smartphones, tablet PCs and related devices. Green IT initiatives across several organizations to curb power losses and protect the environment is a major factor propelling the growth of the market.

Rising demand for energy efficiency and high focus on renewable energy is a key driver aiding in the growth of this market. Also, the growing renewable energy sector, heavy investment in high-speed rail and rising demand for electric vehicles are the key factors propelling growth of market size. But availability of alternatives including compound semiconductor materials such as silicon carbide and Gallium-Nitride (GaN) may restrain the growth of the market. However, high replacement demand and positive developments in the data center market is expected to propel IGBT & super junction MOSFET market demand in coming years.